PART |
Description |
Maker |
S29GL016A S29GL016A100BAI010 S29GL016A100BAI012 S2 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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SPANSION
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S29GL032A100BFIR10 S29GL032A100TFIR10 S29GL032A100 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 64兆,32兆和16兆位3.0伏只页面模式闪存,含00纳米MirrorBit工艺技
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Spansion Inc. Spansion, Inc.
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SST31LH041 31LH041 |
4 Megabit Flash 1 Megabit SRAM ComboMemory From old datasheet system
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SST
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AM75DL9608HGT75IT AM75DL9608HG AM75DL9608HGB70IS A |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and
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SPANSION[SPANSION]
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AT28C010 AT28C010-12 AT28C010-12DM_883 AT28C010-15 |
1 Megabit 128K x 8 Paged CMOS E2PROM 1 Megabit (128K x 8) From old datasheet system
|
ATMEL[ATMEL Corporation]
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EN71PL032A0-70CWP EN71PL032A01 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
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AM27C1024 AM27C1024-120DC5 AM27C1024-120DC5B AM27C |
Quad 2-input exclusive-NOR gates with open collector outputs 14-SOIC 0 to 70 Quad 2-input exclusive-NOR gates with open collector outputs 14-PDIP 0 to 70 1 Megabit (65 K x 16-Bit) CMOS EPROM 1兆位5亩16位)的CMOS存储 1 Megabit (65 K x 16-Bit) CMOS EPROM 64K X 16 UVPROM, 55 ns, CDIP40 Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SO 0 to 70 1兆位5亩16位)的CMOS存储 1 Megabit (65 K x 16-Bit) CMOS EPROM 1兆位65亩16位)的CMOS存储 64K X 16 UVPROM, 70 ns, CDIP40 1 megabit CMOS EPROM
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC SPANSION LLC
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AT45DB011-JC 45DB011B AT45DB011-XC AT45DB011-XI AT |
1-Megabit 2.7-volt Only Serial DataFlash 1-Megabit 2.7-volt Only Serial DataFlash 1M X 1 FLASH 2.7V PROM, PDSO14 1-Megabit 2.7-volt Only Serial DataFlash 1M X 1 FLASH 2.7V PROM, PQCC32 1-Megabit 2.7-volt Only Serial DataFlash 1M X 1 FLASH 2.7V PROM, PDSO8
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ATMEL Corporation Atmel Corp. Atmel, Corp. http://
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AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F |
90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory 70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory 120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory x8 Flash EEPROM x8闪存EEPROM x8/x16 Flash EEPROM
|
Atmel, Corp.
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ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns. High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns. High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns. High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns. High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns. High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
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28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
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Maxwell Technologies, Inc
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